✦ LIBER ✦

Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs

✍ Scribed by Shirokov, M.S.; Cherepko, S.V.; Xiaohang Du; Kwang, J.C.M.; Teeter, D.A.

Book ID: 114554329
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 431 KB
Volume: 50
Category: Article
ISSN: 0018-9480
DOI: 10.1109/22.993410

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization and modeling of bias-st

Characterization and modeling of bias-stressed InGaP/GaAs collector-up tunneling-collector HBTs fabricated with boron-ion implantation

✍ Mochizuki, K.; Tanaka, K.-I.; Uchiyama, H.; Ohta, H.; Terano, A.; Kikawa, T.; Ta 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 749 KB

Large-signal microwave characterization

Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model

✍ Snowden, C.M. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 474 KB

A New Extraction Technique for the Compl

A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

✍ Wen-Bin Tang; Che-Ming Wang; Yue-Ming Hsin 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 457 KB

Characterization of current-induced degr

Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP

✍ Tanaka, S.; Shimawaki, H.; Kasahara, K.; Honjo, K. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 865 KB

Characterization and modeling of bias de

Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design

✍ Heckmann, S.; Sommet, R.; Nebus, J.-M.; Jacquet, J.-C.; Floriot, D.; Auxemery, P 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 567 KB

Large-signal modeling of frequency-dispe

Large-signal modeling of frequency-dispersion effects in submicron MOSFET devices

✍ B. Toner; V. F. Fusco 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 517 KB

## Abstract In this Letter a large‐signal model for the MOSFET will be presented, along with the parameter extraction for the model using large‐signal time‐domain waveforms. The dc/ac hybrid model described accounts for the discrepancy between dc and large‐signal rf extracted equivalent circuit con