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Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP

✍ Scribed by Tanaka, S.; Shimawaki, H.; Kasahara, K.; Honjo, K.


Book ID
114535157
Publisher
IEEE
Year
1993
Tongue
English
Weight
865 KB
Volume
40
Category
Article
ISSN
0018-9383

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Emitter-metal-related degradation in InP
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We investigated the reliability of InP-based HBTs with a ledge structure, focusing on emitter-metal-diffusion-induced degradation. Bias-temperature accelerated tests under high temperatures and high current densities of up to 5 mA/lm 2 were conducted for HBTs with conventional emitter electrodes, wh