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Large-signal modeling of frequency-dispersion effects in submicron MOSFET devices

✍ Scribed by B. Toner; V. F. Fusco

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
517 KB
Volume
34
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

In this Letter a large‐signal model for the MOSFET will be presented, along with the parameter extraction for the model using large‐signal time‐domain waveforms. The dc/ac hybrid model described accounts for the discrepancy between dc and large‐signal rf extracted equivalent circuit conductance and transconductance parameters. In addition, the dynamic nature of the modeling process directly characterizes other phenomena associated with high‐power operation such as self‐heating effects. Full verification of the model is provided for an 80 μm/0.18 μm MOSFET. An improvement in the performance of the model over traditional quasi‐static models at rf whilst maintaining the accuracy of the dc model is demonstrated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 429–432, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10485

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