𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Physics and modelling of hot electron effects in submicron devices

✍ Scribed by R. Castagné

Publisher
Elsevier Science
Year
1985
Weight
702 KB
Volume
134
Category
Article
ISSN
0378-4363

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Large-signal modeling of frequency-dispe
Large-signal modeling of frequency-dispersion effects in submicron MOSFET devices
✍ B. Toner; V. F. Fusco 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 517 KB

## Abstract In this Letter a large‐signal model for the MOSFET will be presented, along with the parameter extraction for the model using large‐signal time‐domain waveforms. The dc/ac hybrid model described accounts for the discrepancy between dc and large‐signal rf extracted equivalent circuit con

Numerical modelling of hot electron tran
Numerical modelling of hot electron transport in A graded heterojunction diode
✍ Hans Hjelmgren; Christopher M. Snowden 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 603 KB

A detailed one-dimensional energy transport model for unipolar GaAs/AIGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non-uniform grid-mesh is used to obtain short simulation times, while the grid-dista

Effect of electron-electron and electron
Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors
✍ P. Lugli; D.K. Ferry 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 278 KB

We present an Ensemble Monte Carlo (EMC) study of the <l-,ctro~:-eleetrorL interaction in semiconductors, utilizing the full dielectric function t.; determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transi~!nt dynamic