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Tunnelling and hot electron effects in single barrier (AlGa)AsGaAs heterostructure devices

✍ Scribed by L. Eaves; P.S.S. Guimaraes; B.R. Snell; F.W. Sheard; D.C. Taylor; G.A. Toombs; J.C. Portal; L. Dmowski; K.E. Singer; G. Hill; M.A. Pate

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 620 KB
Volume: 2
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(86)90153-9

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P.R. China) [\*\*] The authors wish to acknowledge the support from the Natural Science and Engineering Research Council of Canada, and the Emerging Materials Knowledge Network of Materials and Manufacturing of Ontario. Thanks are also due to Sandra Gardner and Hany Aziz of the Xerox Research Center

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