This paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the
โฆ LIBER โฆ
Numerical modelling of hot electron transport in A graded heterojunction diode
โ Scribed by Hans Hjelmgren; Christopher M. Snowden
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 603 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0894-3370
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โฆ Synopsis
A detailed one-dimensional energy transport model for unipolar GaAs/AIGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non-uniform grid-mesh is used to obtain short simulation times, while the grid-distance at the N-n++ interface is small. which is essential to obtain a low reverse current.
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