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Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

✍ Scribed by Sato, Kazuhiro; Ohta, Jitsuo; Inoue, Shigeru; Kobayashi, Atsushi; Fujioka, Hiroshi

Book ID
123609581
Publisher
Institute of Pure and Applied Physics
Year
2009
Tongue
English
Weight
637 KB
Volume
2
Category
Article
ISSN
1882-0778

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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al