✦ LIBER ✦

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

✍ Scribed by M. Jaumann; J. Stimmer; P. Schittenhelm; J.F. Nützel; G. Abstreiter; E. Neufeld; B. Holländer; Ch. Buchal

Book ID: 103619222
Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 271 KB
Volume: 102
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(96)00095-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Room-temperature electroluminescence fro

Room-temperature electroluminescence from H-plasma-implanted silicon

✍ Liu, Weili; Kwok, Sunny C H; Fu, Ricky K Y; Chu, Paul K; Hung, T F; Xu, Zhengkui 📂 Article 📅 2003 🏛 Institute of Physics 🌐 English ⚖ 239 KB

Room-temperature electroluminescence of

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

✍ Oleg Gusev; Mikhail Bresler; Alexey Kuznetsov; Vera Kudoyarova; Petr Pak; Evgeni 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 68 KB

Features of erbium nonradiative deexcita

Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures

✍ K.E. Kudryavtsev; V.P. Kuznetsov; D.V. Shengurov; V.B. Shmagin; Z.F. Krasilnik 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 223 KB

Temperature-induced increase in erbium e

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

✍ V.B. Shmagin; A.V. Lyutov; D.Yu. Remizov; K.E. Kudryavtsev; M.V. Stepikhova; Z.F 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 429 KB

Room temperature light emitting silicon

Room temperature light emitting silicon diodes fabricated by erbium ion implantation

✍ G. Franzò; F. Priolo; S. Coffa; A. Polman; A. Carnera 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 544 KB

Effect of the breakdown nature on Er-rel

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

✍ V.B Shmagin; V.P Kuznetsov; D.Yu Remizov; Z.F Krasil’nik; L.V Krasil’nikova; D.I 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 130 KB

The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole