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Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

✍ Scribed by Mukherjee, Shubhajit; Puzyrev, Yevgeny; Hinckley, John; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Singh, Jasprit; Pantelides, Sokrates T.

Book ID: 120354385
Publisher: John Wiley and Sons
Year: 2013
Tongue: English
Weight: 427 KB
Volume: 10
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201200620

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