TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 Β°C. The str
Role of annealing environment and partial pressure on structure and optical performance of TiO2 thin films fabricated by rf sputter method
β Scribed by G. Yildirim; M. Akdogan; A. Varilci; C. Terzioglu
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 212 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
Influences of the different annealing ambient (in air, 1 bar, 2 bar, 3 bar and 4 bar oxygen partial pressure) on the titanium dioxide (TiO~2~) thin films deposited on soda lime glass by standard radio frequency (rf) magnetron reactive sputtering method at 100 watt were investigated by means of Xβray diffractometer (XRD), ultra violet spectrometer (UVβvis), and Scanning Electron Microscopy (SEM). It was found that either optical properties or energy band gaps of the films enhanced with increase in the oxygen partial pressure up to 3 bar. The energy band gaps of the films (except for the film annealed in 4 bar oxygen partial pressure) became larger than the film annealed in atmospheric pressure. The best transmission was observed for the thin film annealed in 3 bar oxygen partial pressure. Moreover, not only was grainβlike structure found to be more dominant than dotβlike structure but also growth of anatase phase was observed instead of that of the rutile phase with increasing oxygen partial pressure up to 3 bar. (Β© 2010 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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