Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir
β¦ LIBER β¦
RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(0 0 1) substrates
β Scribed by M. Kakuda; S. Kuboya; K. Onabe
- Book ID
- 108166295
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 253 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
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