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RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

✍ Scribed by Shi-Jin Ding; Hang Hu; Chunxiang Zhu; Sun Jung Kim; Xiongfei Yu; Ming-Fu Li; Byung Jin Cho; Chan, D.S.H.; Yu, M.B.; Rustagi, S.C.; Chin, A.; Dim-Lee Kwong

Book ID: 114617434
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 422 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.827367

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