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Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

✍ Scribed by Hongjun Wang; Changwei Zou; Lin Zhou; Canxin Tian; Dejun Fu


Book ID
113797859
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
359 KB
Volume
91
Category
Article
ISSN
0167-9317

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Resistive-switching mechanism of transpa
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## Abstract We report an indium‐free transparent resistive switching random access memory (TRRAM) device based on a gallium‐doped zinc oxide (GZO)‐Ga~2~O~3~‐ZnO‐Ga~2~O~3~‐GZO structure grown by metal‐organic chemical vapor deposition. The bipolar resistive‐switching behavior is investigated based o