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Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

โœ Scribed by Hsueh-Chih Tseng; Ting-Chang Chang; Jheng-Jie Huang; Yu-Ting Chen; Po-Chun Yang; Hui-Chun Huang; Der-Shin Gan; New-Jin Ho; Simon M. Sze; Ming-Jinn Tsai

Book ID
113937163
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
883 KB
Volume
520
Category
Article
ISSN
0040-6090

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