Mechanism of nonvolatile resistive switching in graphene oxide thin films

✍ Scribed by Fei Zhuge; Benlin Hu; Congli He; Xufeng Zhou; Zhaoping Liu; Run-Wei Li

• Book ID: 104009573
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 486 KB
• Volume: 49
• Category: Article
• ISSN: 0008-6223
• DOI: 10.1016/j.carbon.2011.04.071

✦ Synopsis

The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic currentvoltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt sandwiches, the RS originates from the formation and rupture of conducting filaments. An analysis of the temperature dependence of the ON-state resistance reveals that the filaments are composed of metal atoms due to the diffusion of the top electrodes under a bias voltage. Moreover, the RS is found to occur within confined regions of the metal filaments. The RS effect is also observed in GO/Pt structures by CAFM. It is attributed to the redox reactions between GO and adsorbed water induced by external voltage biases.