The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic currentvoltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt san
โฆ LIBER โฆ
Studies on nonvolatile resistance memory switching in ZnO thin films
โ Scribed by L. M. Kukreja; A. K. Das; P. Misra
- Book ID
- 107582224
- Publisher
- Springer-Verlag
- Year
- 2009
- Tongue
- English
- Weight
- 254 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0250-4707
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