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Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

✍ Scribed by P. Hu; X.Y. Li; J.Q. Lu; M. Yang; Q.B. Lv; S.W. Li

Book ID
108241917
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
431 KB
Volume
375
Category
Article
ISSN
0375-9601

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Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox