✦ LIBER ✦

Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering

✍ Scribed by Zhu, Wei ;Zhang, Xin ;Fu, Xiaoniu ;Zhou, Yongning ;Luo, Shengyun ;Wu, Xiaojing

Book ID: 112181087
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 720 KB
Volume: 209
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201228175

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Reproducible resistive-switching behavio

Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

✍ Lu, Qian ;Zhang, Xin ;Zhu, Wei ;Zhou, Yongning ;Zhou, Qianfei ;Liu, Lilong ;Wu, 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 322 KB

## Abstract Copper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low

Structural, optical and mechanical prope

Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering

✍ S. Venkataraj; D. Severin; R. Drese; F. Koerfer; M. Wuttig 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 574 KB

Atomic force microscopy (AFM) and X-ray

Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique

✍ Kah-Yoong Chan; Bee-San Teo 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 627 KB