Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation
✍ Scribed by Lu, Qian ;Zhang, Xin ;Zhu, Wei ;Zhou, Yongning ;Zhou, Qianfei ;Liu, Lilong ;Wu, Xiaojing
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 322 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Copper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low operation voltage, forming‐free characteristics and a distinguishable resistance ratio. The bipolar switching behavior is attributed to the formation and rupture of conductive filaments within a cycle, which is confirmed by spreading‐resistance images of a conducting atomic force microscope. Based on X‐ray photoelectron spectroscopy (XPS) analysis, semiconducting Cu~3~N phase and metallic Cu~4~N phase coexist in the copper nitride film and local conducting filaments might be formed by interconnection of the metallic phases by migration of Cu^+^ ions under a bias voltage.