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Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

โœ Scribed by Feng Zhang; Xiaomin Li; Xiangdong Gao; Liang Wu; Fuwei Zhuge; Qun Wang; Xinjun Liu; Rui Yang; Yong He

Book ID
116890761
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
741 KB
Volume
152
Category
Article
ISSN
0038-1098

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Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox