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Realization of transient memory-loss with NiO-based resistive switching device

✍ Scribed by Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

Book ID: 118782227
Publisher: Springer
Year: 2012
Tongue: English
Weight: 294 KB
Volume: 109
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-012-7179-9

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