๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Resist debris formation in electron beam lithography

โœ Scribed by P.R. Deshmukh; K.J. Rangra; O.P. Wadhawan

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
978 KB
Volume
52
Category
Article
ISSN
0042-207X

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โœฆ Synopsis

The resist debris (RD) formation dependence on beam stepping to beam size ratio in electron beam lithography (EBL) is theoretically and experimentally investigated. The theoretically simulated results show a distinct variation in RD formation as the beam stepping to beam size ratio is varied from 0.5 to 2.0. The corresponding experimental results show a very close resemblance with the simulated results. It is further demonstrated that this undesirable phenomenon of RD formation gives another dimension to look at the problem of proximity exposure effect in EBL and can also be well utilized in certain cases.

๐Ÿ“œ SIMILAR VOLUMES

Electron-beam lithography resist profile
Electron-beam lithography resist profile simulation for highly sensitive resist
โœ C. Lee; Y.M. Ham; S.H. Kim; K. Chun ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 287 KB

A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named ELlS (Electron-beam Lithography Simulator) that can