The resist debris (RD) formation dependence on beam stepping to beam size ratio in electron beam lithography (EBL) is theoretically and experimentally investigated. The theoretically simulated results show a distinct variation in RD formation as the beam stepping to beam size ratio is varied from 0.
โฆ LIBER โฆ
Phenomenon of resist debris formation in electron beam lithography and its possible application
โ Scribed by PR Deshmukh; KJ Rangra; M Singh; PD Vyas; BB Pal
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 852 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0042-207X
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