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Residual stress of AlN films RF sputter deposited on Si(111) substrate

✍ Scribed by Hui Zhong, Zhanfei Xiao, Xiangquan Jiao, Jie Yang, Hualei Wang, Rui Zhang, Yu Shi

Book ID
118801648
Publisher
Springer US
Year
2012
Tongue
English
Weight
540 KB
Volume
23
Category
Article
ISSN
0957-4522

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Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 Β°C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The