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Residual disorder in low-temperature polycrystalline silicon

โœ Scribed by E. Bustarret; A. Deneuville; R. Grosleau; L. C. Brunel; M. Brunel

Book ID
112814177
Publisher
Springer US
Year
1984
Tongue
English
Weight
607 KB
Volume
13
Category
Article
ISSN
0361-5235

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We have studied the growth of polycrystalline silicon by remote plasma chemical vapor deposition using a SiFd/Hz mixture at a low temperature of 1OO'C. Thin film is composed of grains in which there are many small sub-grains of less than IOnm. The film exhibited the polycrystalline volume fraction o