๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Polycrystalline-silicon tfts fabricated at low temperature using ion doping technique

โœ Scribed by Atsushi Yoshinouchi; Akihiro Oda; Masataka Itoh; Tatsuo Morita; Shuhei Tsuchimoto


Book ID
112078830
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
524 KB
Volume
76
Category
Article
ISSN
8756-663X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Ion doping system for low temperature po
โœ Yoshinori Kawasaki ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 389 KB

Ion doping technology (IDT) for impurity doping is exactly one of the most important technology in the manufacturing of low temperature poly-silicon (LPS) TFT. Improvement of IDT are carried on according to more large-size glass and the requirement of LPS-TFTร•s performance. IDT has become attractive