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P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

โœ Scribed by J. Puigdollers; J. Cifre; M.C. Polo; J.M. Asensi; J. Bertomeu; J. Andreu; A. Lloret


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
327 KB
Volume
86
Category
Article
ISSN
0169-4332

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Effects of deposition pressure on the mi
โœ Peiqing Luo; Zhibin Zhou; Youjie Li; Shuquan Lin; Xiaoming Dou; Rongqiang Cui ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 474 KB

We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not