Effects of deposition pressure on the mi
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Peiqing Luo; Zhibin Zhou; Youjie Li; Shuquan Lin; Xiaoming Dou; Rongqiang Cui
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Article
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2008
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Elsevier Science
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English
β 474 KB
We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not