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Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

✍ Scribed by Bibhu P. Swain; Nong M. Hwang


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
728 KB
Volume
254
Category
Article
ISSN
0169-4332

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Effects of deposition pressure on the mi
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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not