Ion doping system for low temperature poly-silicon TFT

✍ Scribed by Yoshinori Kawasaki

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 389 KB
• Volume: 2
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/s1567-1739(02)00100-1

✦ Synopsis

Ion doping technology (IDT) for impurity doping is exactly one of the most important technology in the manufacturing of low temperature poly-silicon (LPS) TFT. Improvement of IDT are carried on according to more large-size glass and the requirement of LPS-TFTÕs performance. IDT has become attractive very much, because it is required the application for forming source/drain, LDD region and adjusting Vth.

We have developed ion doping system for large-size glass up to 730 Â 920 mm 2 . It is focused to achieve using the sheet style (rectangular) beam and scanning glass, and currently we have developed the new system that has the function of mass separation of ion beam.