Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

✍ Scribed by F.J. Clough; A.O. Brown; S.N. Ekkanath Madathil; W.I. Milne

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 363 KB
• Volume: 28
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(95)00095-p