Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

✍ Scribed by F.J. Clough; A.O. Brown; S.N.Ekkanath Madathil; W.I. Milne

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 530 KB
• Volume: 270
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(95)06834-1