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Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier

โœ Scribed by Ju-Young Yun; Shi-Woo Rhee


Book ID
110642287
Publisher
Springer US
Year
1996
Tongue
English
Weight
683 KB
Volume
13
Category
Article
ISSN
0256-1115

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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de