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Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks

✍ Scribed by E. Efthymiou; S. Bernardini; S.N. Volkos; B. Hamilton; J.F. Zhang; H.J. Uppal; A.R. Peaker

Book ID
104051739
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
473 KB
Volume
84
Category
Article
ISSN
0167-9317

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The generation of defects in ultra-thin SiO gate layers and SiO / ZrO gate stacks is studied through the time-dependent 2 2 2 current density variation DJ (t) 5 J (t) 2 J (0) observed during constant gate voltage stress of MOS capacitors. The time G G G dependence of the defect density variation DN