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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

✍ Scribed by Y. Deng; D.G. Zhao; L.C. Le; D.S. Jiang; L.L. Wu; J.J. Zhu; H. Wang; Z.S. Liu; S.M. Zhang; Hui Yang; J.W. Liang


Book ID
116607525
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
311 KB
Volume
509
Category
Article
ISSN
0925-8388

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## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 Β°C. The films had a preferred orie