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Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

โœ Scribed by D.G. Zhao; Z.S. Liu; J.J. Zhu; S.M. Zhang; D.S. Jiang; Hui Yang; J.W. Liang; X.Y. Li; H.M. Gong


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
582 KB
Volume
253
Category
Article
ISSN
0169-4332

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Microstructures of AlGaN/AlN/Si (111) Gr
โœ Xi, Dongjuan ;Zheng, Youdou ;Chen, Peng ;Zhao, Zuoming ;Chen, Ping ;Xie, Shiyong ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and