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Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

✍ Scribed by Shelton, B.S.; Lambert, D.J.H.; Jian Jang Huang; Wong, M.M.; Chowdhury, U.; Ting Gang Zhu; Kwon, H.K.; Liliental-Weber, Z.; Benarama, M.; Feng, M.; Dupuis, R.D.

Book ID: 114538598
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 72 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.906441

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## Abstract A thirty‐pair AlGaN/AlN distributed Bragg reflector (DBR) targeted at a center wavelength of 320 nm was grown on a 2‐inch sapphire substrate by metalorganic chemical vapor deposition (MOCVD). It is free of cracks in the main area of the wafer except for a ∼4 mm periphery observed under