Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon

✍ Scribed by M. Servidori; F. Cembali; R. Fabbri; E. Gabilli; P. Negrini; S. Solmi; P. Zaumseil; U. Winter; M. Anderle; R. Canteri

• Book ID: 113280191
• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 453 KB
• Volume: 39
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/0168-583x(89)90800-8