Reduced effective temperature of hot electrons in nano-sized metal-oxide-semiconductor field-effect transistors
β Scribed by Y. Fu; M. Willander; H. Pettersson
- Book ID
- 106018925
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 518 KB
- Volume
- 77
- Category
- Article
- ISSN
- 1432-0630
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We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl
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