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Redistribution of ion-implanted boron and phosphorus profiles in silicon under annealing in inert and oxidizing ambients

✍ Scribed by Burenkov, A. F.; Komarov, F. F.; Kuryazov, V. D.; Temkin, M. M.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of structure defects and behav

✍ Komarov, F. F. ;Kuryazov, V. D. ;Solovev, V. S. ;Shiryaev, S. Yu. 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 479 KB

ChemInform Abstract: Boron Ultrashallow

✍ W. Lerch; M. Glueck; N. A. Stolwijk; H. Walk; M. Schaefer; S. D. Marcus; D. F. D 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 31 KB

Coarsening of End-of-Range defects in io

✍ L.F Giles; M Omri; B de Mauduit; A Claverie; D Skarlatos; D Tsoukalas; A Nejim 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 218 KB

Diffusion of boron and phosphorus in sil

✍ G. V. Gadiyak 📂 Article 📅 1997 🏛 Springer 🌐 English ⚖ 160 KB

In-depth profiles of phosphorus ion-impl

✍ J.M. Morabito; J.C. Tsai 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 277 KB

Investigation of BF2+ implants in silico

✍ L. Kaabi; C. Gontrand; M. Lemiti; B. Remaki; B. Balland; J. Meddeb; O. Marty 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 588 KB