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In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emission

✍ Scribed by J.M. Morabito; J.C. Tsai

Book ID
118980450
Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
277 KB
Volume
33
Category
Article
ISSN
0039-6028

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.