๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Formation of structure defects and behaviour of ion-implanted boron in silicon under annealing in various ambients

โœ Scribed by Komarov, F. F. ;Kuryazov, V. D. ;Solovev, V. S. ;Shiryaev, S. Yu.

Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
479 KB
Volume
58
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Effect of boron on formation of intersti
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
โœ McCallum, J. C. ;Villis, B. J. ;Johnson, B. C. ;Stavrias, N. ;Burgess, J. E. ;Ch ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 310 KB

## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitialโ€related centres, particularly the Wโ€centre which is often observed after ion implantation and a low temperature anneal. Competition between siliconโ€interstitial and boronโ€int