๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Redistribution of Er implanted into Si(1 0 0): Correlation with implantation induced damage

โœ Scribed by T.K Chini; D.P Datta; B Satpati; M Tanemura; F Okuyama


Book ID
114167561
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
393 KB
Volume
212
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Annealing of radiation damage in (1&#xa0
โœ I.O. Usov; P.N. Arendt; J.R. Groves; L. Stan; R.F. DePaula ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 279 KB

The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i

MEIS study of As implantation in O or N
โœ M. Dalponte; H. Boudinov; L.V. Goncharova; E. Garfunkel; T. Gustafsson ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 210 KB

We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 ยฐC of 240 keV O รพ 2 or N รพ 2 ions and a dose of 2.5 โ€ข 10 16 cm ร€2 . The As dopant was introduced by implanting at