Redistribution of Er implanted into Si(1 0 0): Correlation with implantation induced damage
โ Scribed by T.K Chini; D.P Datta; B Satpati; M Tanemura; F Okuyama
- Book ID
- 114167561
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 393 KB
- Volume
- 212
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i
We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 ยฐC of 240 keV O รพ 2 or N รพ 2 ions and a dose of 2.5 โข 10 16 cm ร2 . The As dopant was introduced by implanting at