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Recrystallization of strained GexSi1–x/Si layers with various Ge gradients and in the presence of impurities

✍ Scribed by F. Corni; R. Tonini; R. Balboni; L. Vescan

Book ID: 103954594
Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 429 KB
Volume: 28
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90005-1

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