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Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations

✍ Scribed by Uma Jain; S.C. Jain; J. Nijs; J.R. Willis; R. Bullough; R.P. Mertens; R. Van Overstraeten


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
699 KB
Volume
36
Category
Article
ISSN
0038-1101

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