Energy characteristics of boron impurity in Si∕Si[sub 1−x]Ge[sub x] heterostructures with on-center and on-edge selective doping of quantum wells

✍ Scribed by Vainberg, V. V.; Gudenko, Yu. N.; Poroshin, V. N.; Tulupenko, V. N.; Cheng, N. N.; Yang, Z. P.; Mashanov, V.; Wang, K. Y.

• Book ID: 120811292
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 390 KB
• Volume: 33
• Category: Article
• ISSN: 1063-777X
• DOI: 10.1063/1.2746865