✦ LIBER ✦
Strain engineered segregation regimes for the fabrication of thin Si[sub 1−x]Ge[sub x] layers with abrupt n-type doping
✍ Scribed by Berbezier, I.; Ayoub, J. P.; Ronda, A.; Oehme, M.; Lyutovich, K.; Kasper, E.; Di Marino, M.; Bisognin, G.; Napolitani, E.; Berti, M.
- Book ID
- 127181397
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 669 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0021-8979
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