๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

โœ Scribed by Giovanni Bruno; Maria Losurdo; Maria M. Giangregorio; Pio Capezzuto; April S. Brown; Tong-Ho Kim; Soojeong Choi


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
700 KB
Volume
253
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Remote Plasma MOCVD Growth and Processin
โœ Losurdo, M. ;Capezzuto, P. ;Bruno, G. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 188 KB

In situ real time spectroscopic ellipsometry, X-ray photoelectron spectroscopy and optical emission spectroscopy are used to study the processes of sapphire substrate cleaning and nitridation upon exposure to rf plasma generated H-and N-atoms, respectively, at temperature as low as 200 C. It is foun

The Growth of GaN Using Plasma Assisted
โœ Campion, R.P. ;Li, T. ;Foxon, C.T. ;Harrison, I. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 96 KB ๐Ÿ‘ 2 views

Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed

Growth and Characterization of InGaN/GaN
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t