In situ real time spectroscopic ellipsometry, X-ray photoelectron spectroscopy and optical emission spectroscopy are used to study the processes of sapphire substrate cleaning and nitridation upon exposure to rf plasma generated H-and N-atoms, respectively, at temperature as low as 200 C. It is foun
Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN
โ Scribed by Giovanni Bruno; Maria Losurdo; Maria M. Giangregorio; Pio Capezzuto; April S. Brown; Tong-Ho Kim; Soojeong Choi
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 700 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
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