Remote Plasma MOCVD Growth and Processing of GaN: A Study by Real Time Ellipsometry

✍ Scribed by Losurdo, M. ;Capezzuto, P. ;Bruno, G.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 188 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<733::aid-pssa733>3.0.co;2-i

✦ Synopsis

In situ real time spectroscopic ellipsometry, X-ray photoelectron spectroscopy and optical emission spectroscopy are used to study the processes of sapphire substrate cleaning and nitridation upon exposure to rf plasma generated H-and N-atoms, respectively, at temperature as low as 200 C. It is found that H-atoms are effective in removal carbon contamination and that the in-diffusion process of H-atoms can be controlled by ellipsometry. Moreover, it is found that remote plasma nitridation at 200 C forms an homogeneous surface nitrided layer after % 30 min of exposure. Finally, the study of the GaN growth rate for the low temperature N 2 plasma assisted growth is reported.