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Reactive scattering study of etching dynamics: HCl on GaAs(100)

โœ Scribed by Essex-Lopresti, Johnathan; Jia, Weijie; Munro, Simon; Gorry, Peter A.


Book ID
121221472
Publisher
Royal Society of Chemistry
Year
2000
Tongue
English
Weight
239 KB
Volume
2
Category
Article
ISSN
1463-9076

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## In situ atomic force microscopy (AFM) was used to observe the surface structure change during electrodeposition of Cu on p-GaAs(100) surface in HCI solution. How the electrodeposition of Cu proceeded was strongly dependent on the structure of the substrate. In the portion where the surface was