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Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasma

✍ Scribed by Kim, Jae-Whan; Kim, Yong-Chun; Lee, Won-Jong


Book ID
121793346
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
749 KB
Volume
78
Category
Article
ISSN
0021-8979

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